Samsung Reportedly Improves Yield of DRAM for HBM3E and HBM4

According to reports that South Korean media citing internal sources, Samsung Electronics' DS division has recently increased the yield of its 10nm-class fifth-generation (1b) DRAM, used in the core chips of HBM3E, to 92% (based on cold test). In addition, the yield of sixth-generation (1c) DRAM, to be installed in HBM4, has been raised to over 75%.